Start Optiken Q-Switches EO Q-Switch KD*P
EO Q-Switch KD*P Drucken E-Mail

 

High contrast ratio through the visible and NIR.

An EO Q-Switch alters the polarization state of light passing through it when an applied voltage induces birefringence changes in an electro-optic crystal such as KD*P. When used in conjunction with polarizers, these cells can function as optical switches, or laser Q-switches.

Our EO Q-switch employs the finest strain-free, highly deuterated KD*P available. Based on advanced crystal fabrication and coating technlogy, we can offer a variety of laser wavelengths EO Q switchs which exhibits high transmission (T>97% @ 1064 nm), high damaged threshold (>500W/cm2 )and high extinction ratio (>2000:1).

 

 


                                           1/4Wave Voltage Vs Wavelength

 

Applications: 

 download full data sheet

  • OEM laser systems
  • Medical / cosmetic lasers
  • Versatile R&D laser platforms
  • Solid state lasers

 

FEATURESBENEFITS
CCI Quality - economically priced Exceptional value
Finest strain-free KD*P High contrast ratio
High damage threshold
Low 1/2 wave voltage
Space efficient Ideal for compact lasers
Ceramic apertures Clean and highly damage-resistant
High contrast ratio Exceptional hold-off
Quick electrical connectorsEfficient/reliable installation
Ultra-flat crystals Excellent beam propagation

 

 

 Electro-optical @ 1064 nm

1/4 Wave Voltage:3.3 kV
Vmax  7 kV  
Transmitted Wave Front Error : < 1/8 Wave
ICR >2000:1
VCR>1500:1
Capacitance: 6 pF
Damage Threshold> 500 MW / cm2 @1064nm, 10ns
Wavelength Range 300 - 1300 nm 

 

 

Housing DimensionsEOQ-KD*P-8EOQ-KD*P-10EOQ-KD*P-13
Aperture8 mm 10 mm 13 mm
Length39 mm39 mm45 mm
Diameter25.35 mm25.35 mm25.35 mm

 

 


OUTLINE DRAWING: